cha4107 - 99f ref. : dscha41074188 - 07 jul 14 1 / 10 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 4.5 - 6.5ghz medium power amplifier gaas monolithic microwave ic description the cha4107 - 99f is a monolithic two stage power amplifier designed for c - b and applications. the mpa provides typically 26 dbm output power associated to 35% power added efficiency at 3dbc omp . the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. main features main characteristics vd = 8v, id (quiescent) = 115 ma , drain pulse width = 4 5s, duty cycle = 1 2 % symbol parameter min typ max unit freq frequency range 4. 5 6 .5 ghz gain linear gain 24.5 db nf noise figure 5 db pout output power @ 3db comp. 26 dbm out in vd2 vd1 vg
cha4107 - 99f 4.5 - 6.5ghz medium power amplifier ref. : dscha41074188 - 07 jul 14 2 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics vd = 8v, id (quiescent) = 115 ma, drain pulse width = 4 5s, duty cycle = 12% symbol parameter min typ max unit freq frequency range 4.5 6 .5 ghz gain linear gain 24.5 db nf noise figure 5 db rlin input return loss 13 db rlout output return loss 8 db p_ 1 dbc output power @ 1 dbc omp 2 5 dbm p_3dbc output power @ 3dbc omp 26 dbm pae_3dbc power added efficiency @ 3dbc 35 % id_3dbc supply drain current @ 3dbc 130 ma vd1, vd2 drain supply voltage 8 v id supply quiescent current (1) 115 ma vg gate supply voltage - 0.8 v these values are representative of on - jig measurements. (1) parameter can be adjusted by tuning of vg. absolute maximum ratings (1) tamb.= +25c symbol parameter values unit cmp compression level (2) 6 db vd supp ly voltage 9.5 v id supply quiescent current 2 5 0 ma id_sat supply current in saturation 350 ma vg supply voltage [ - 3.0; - 0. 4] v tj maximum junction temperature 175 c tstg storage temperature range - 55 to +1 50 c top operating temperature range - 40 to +85 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) for higher compression the level limit can be increased by decreasing the voltage vd using the rate 0.5v/dbcomp.
4.5 - 6.5ghz medium power amplifier cha4107 - 99f ref. : dscha41074188 - 07 jul 14 3 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on - wafer sij parameters tamb.= +25c, vd = +8v, id = 1 15 ma freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 2.00 - 3.71 - 43.44 - 63.21 - 139.00 5.79 166.00 - 8.39 31.33 2.40 - 3.85 - 49.94 - 63.68 - 72.72 10.38 95.99 - 7.92 - 25.37 2.80 - 4.02 - 57.93 - 63.92 164.50 12.30 48.66 - 10.56 - 34.55 3.20 - 4.46 - 69.48 - 48.25 120.80 14.21 11.12 - 10.62 - 29.96 3.60 - 5.24 - 83.39 - 60.90 170.80 16.68 - 23.41 - 9.14 - 30.55 4.00 - 7.12 - 97.66 - 70.26 - 57.20 19.36 - 59.84 - 8.22 - 43.06 4.40 - 10.98 - 106.30 - 52.87 - 7.31 21.91 - 103.70 - 8.02 - 56.73 4.80 - 13.83 - 90.00 - 48.62 22.44 23.30 - 150.90 - 8.67 - 68.98 5.20 - 12.93 - 82.05 - 49.80 - 23.29 23.52 163.50 - 9.11 - 79.47 5.60 - 13.52 - 85.54 - 57.81 - 65.50 23.52 121.40 - 8.78 - 92.08 6.00 - 14.21 - 73.76 - 49.52 - 124.40 23.65 77.11 - 8.20 - 113.30 6.40 - 11.03 - 69.98 - 51.47 - 177.10 23.16 28.73 - 8.47 - 141.30 6.80 - 8.33 - 89.16 - 52.36 159.00 21.03 - 21.97 - 10.46 - 173.00 7.20 - 7.75 - 112.90 - 63.26 142.80 17.81 - 66.68 - 12.94 164.30 7.60 - 7.77 - 130.30 - 69.48 2.62 14.02 - 103.70 - 14.57 143.70 8.00 - 7.68 - 148.30 - 53.55 121.40 10.28 - 136.90 - 15.74 130.80 8.40 - 7.21 - 166.40 - 59.68 8.18 6.56 - 166.10 - 14.85 120.40 8.80 - 6.84 175.30 - 51.19 138.20 2.62 166.90 - 14.71 114.80 9.20 - 6.19 159.50 - 50.78 - 51.15 - 1.14 143.70 - 13.35 106.30 9.60 - 5.86 143.80 - 55.03 - 47.20 - 4.96 122.70 - 12.13 98.57 10.00 - 5.46 128.60 - 52.40 - 146.90 - 8.67 103.10 - 10.43 91.47 10.40 - 4.84 116.20 - 62.55 - 176.60 - 12.02 85.93 - 9.05 85.73 10.80 - 4.77 104.70 - 48.22 - 131.80 - 15.66 70.81 - 8.17 78.93 11.20 - 3.96 93.63 - 48.09 - 93.38 - 18.84 54.85 - 7.21 71.07 11.60 - 3.67 87.22 - 48.28 55.47 - 21.78 41.57 - 6.18 62.82 12.00 - 3.37 75.38 - 59.40 173.70 - 25.54 29.73 - 5.44 60.08 12.40 - 3.35 70.02 - 52.11 - 103.20 - 28.37 20.69 - 4.30 52.83 12.80 - 3.11 57.48 - 43.51 175.10 - 31.95 0.60 - 3.94 47.00 13.20 - 1.64 56.46 - 44.50 55.48 - 32.32 - 8.66 - 3.00 35.69 13.60 - 1.74 48.11 - 45.37 141.30 - 37.42 - 26.74 - 3.14 26.64 14.00 - 1.83 43.10 - 53.12 119.10 - 39.44 - 40.94 - 2.82 24.77
cha4107 - 99f 4.5 - 6.5ghz medium power amplifier ref. : dscha41074188 - 07 jul 14 4 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on - wafer sij parameters tamb.= +25c, vd = +8v, id = 1 15 ma freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 14.40 - 1.57 41.82 - 56.19 59.72 - 46.09 - 48.43 - 1.59 19.73 14.80 - 1.17 32.98 - 40.02 - 169.00 - 51.16 - 127.00 - 1.49 15.50 15.20 - 1.84 24.26 - 40.17 - 71.68 - 47.88 - 59.04 - 2.12 11.99 15.60 - 0.89 19.12 - 51.96 - 16.02 - 49.10 - 76.69 - 1.77 4.34 16.00 - 1.09 26.33 - 54.17 - 178.80 - 42.14 - 83.60 - 0.50 2.88 16.40 - 1.09 9.86 - 51.44 174.50 - 50.02 157.60 - 1.75 - 3.97 16.80 - 0.36 8.65 - 44.47 - 19.29 - 45.84 - 16.49 - 0.61 - 10.70 17.20 - 0.85 6.22 - 44.09 60.04 - 53.59 50.86 - 0.66 - 9.31 17.60 - 0.31 - 2.44 - 46.94 8.43 - 48.01 97.35 - 1.29 - 18.54 18.00 - 0.86 - 0.40 - 47.33 - 162.90 - 48.23 69.86 - 0.66 - 20.51
4.5 - 6.5ghz medium power amplifier cha4107 - 99f ref. : dscha41074188 - 07 jul 14 5 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on jig measurements tamb.= +25c, vd = 8v, id (quiescent) = 115ma, drain pulse width = 4 5s, duty cycle = 12% linear gain versus frequency output power @ 3dbcomp versus frequency 20 21 22 23 24 25 26 27 28 4.5 5.0 5.5 6.0 6.5 frequency (ghz) linear gain (db) 22 23 24 25 26 27 28 29 30 4.5 5.0 5.5 6.0 6.5 frequency (ghz) pout (dbm)
cha4107 - 99f 4.5 - 6.5ghz medium power amplifier ref. : dscha41074188 - 07 jul 14 6 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on jig measurements tamb.= +25c, vd = 8v, id (quiescent) = 115ma, drain pulse width = 4 5s, duty cycle = 12% power added efficiency @ 3dbcomp versus frequency drain current @ 3dbcomp versus frequency 28 30 32 34 36 38 40 42 4.5 5.0 5.5 6.0 6.5 frequency (ghz) pae (%) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 4.50 5.00 5.50 6.00 6.50 frequency (ghz) id (a)
4.5 - 6.5ghz medium power amplifier cha4107 - 99f ref. : dscha41074188 - 07 jul 14 7 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data all dimensions are in micrometers chip size = 1 500 x2370 35m chip thickness = 70m 10m rf pads (1, 12) = 100 x 122m2 dc pads (3, 6, 8, 11) = 100 x 100m2 chip width and length are given with a tolerance of 35m pin number pin name description 1 in rf input 3 , 4 , 7, 8 vss, g 1b, g2b, g2a nc 5 g1a vg 2, 9 gnd nc 6, 1 0 vd1, vd2 vd 1 1 out rf output
cha4107 - 99f 4.5 - 6.5ghz medium power amplifier ref. : dscha41074188 - 07 jul 14 8 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly plan pads g 1a (pin 5) & g2 a (pin 8) are connected inside the chip, the cha 4107 could be used without g2a bias. there is a resistor bridge inside the chip. this one generates the correct value of g1 a bias. e quivalent rf wir e bonding: 0.2 nh (typical length of 200m for a 25m diameter wire). bonding recommendations port connection external capacitor in inductance (lbonding) = 0. 2 nh 1 gold wire with diameter of 25m out inductance (lbonding) = 0. 2 nh 1 gold wire with diameter of 25m vg inductance ? vd inductance ? c1=100pf c2=10nf vg vd vd vg
4.5 - 6.5ghz medium power amplifier cha4107 - 99f ref. : dscha41074188 - 07 jul 14 9 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic medium power amplifier: 8v, 115ma g1b vd1 in out 170 5 5 4x60m 10x55m 170 10 170 vg 20 pf 25 50 5 20 pf g2b vd2 g2a 20 pf 170 25 5 20 pf 2 gnd
cha4107 - 99f 4.5 - 6.5ghz medium power amplifier ref. : dscha41074188 - 07 jul 14 10 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . ordering information chip form : cha4107 - 99f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent righ ts of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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